MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS
MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS
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DOI：
10.1103/physrevb.38.9721
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发表时间：
1988-11-15
影响因子：
3.7
通讯作者：
LAUX, SE
中科院分区：
文献类型：
--
作者：
FISCHETTI, MV;LAUX, SE
本文用蒙特卡罗方法研究了Si和GaAs中电子输运的物理过程，该方法改进了高能载流子动力学的“最先进”处理方法。(1)半导体是超越有效质量近似建模通过使用的能带结构从赝势计算。(2)电子-声子，电子-杂质，和电子-电子散射率计算的方式与固体的全能带结构一致，从而占密度的状态和矩阵元素的影响比以前的运输配方更准确。(3)远程载流子-载流子相互作用和空间电荷效应包括耦合的Monte Carlo模拟的自洽的二维泊松解更新的频率足够大，以解决在高掺杂区域的等离子体振荡。该技术被用来研究实验亚微米硅场效应晶体管的沟道长度小至60 nm，工作在77和300 K。速度过冲和高度非本地，非平衡现象一起研究在这些超小型结构中的电子-电子相互作用的作用。在所考虑的系统中，包括完整的能带结构具有通过电子转移到上传导谷来减少速度过冲量的效果，特别是在大的偏压和低温下。物理图像的合理性是由模拟结果与现有实验数据的密切一致性所支持的。
The physics of electron transport in Si and GaAs is investigated with use of a Monte Carlo technique which improves the" state-of-the-art" treatment of high-energy carrier dynamics.(1) The semiconductor is modeled beyond the effective-mass approximation by using the band structure obtained from empirical-pseudopotential calculations.(2) The electron-phonon, electron-impurity, and electron-electron scattering rates are computed in a way consistent with the full band structure of the solid, thus accounting for density-of-states and matrix-element effects more accurately than previous transport formulations.(3) The long-range carrier-carrier interaction and space-charge effects are included by coupling the Monte Carlo simulation to a self-consistent two-dimensional Poisson solution updated at a frequency large enough to resolve the plasma oscillations in highly doped regions. The technique is employed to study experimental submicrometer Si field-effect transistors with channel lengths as small as 60 nm operating at 77 and 300 K. Velocity overshoot and highly nonlocal, off-equilibrium phenomena are investigated together with the role of electron-electron interaction in these ultrasmall structures. In the systems considered, the inclusion of the full band structure has the effect of reducing the amount of velocity overshoot via electron transfer to upper conduction valleys, particularly at large biases and low temperatures. The reasonableness of the physical picture is supported by the close agreement of the results of the simulation to available experimental data.