Dynamic characteristics of PdCoO2/β-Ga2O3 Schottky junctions
Dynamic characteristics of PdCoO2/β-Ga2O3 Schottky junctions
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DOI：
10.1063/5.0008137
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发表时间：
2020-06-08
影响因子：
4
通讯作者：
Tsukazaki, A.
中科院分区：
文献类型：
--
作者：
Harada, T.;Tsukazaki, A.
高频二极管是电路中的重要元件，为AC/DC转换器、射频检测器和汽车逆变器提供电流整流功能。基于宽带隙半导体的肖特基势垒二极管由于反向恢复时间短，开关过程中的能量耗散最小，因此在高频应用中具有很好的前景。在这项研究中，我们报告的肖特基结组成的层状氧化物金属PdCoO 2和n型β-Ga 2 O3衬底的动态特性。PdCoO_2/β-Ga_2 O_3肖特基结的整流电流-电压特性在高达3 MHz的高频下表现出相当小的迟滞。对于通态到关态的切换，电流斜坡率约为-2 × 10（10）A/scm（2），反向恢复时间短至11 ns。在25-350摄氏度的工作温度范围内持续获得短的反向恢复时间，显示出PdCoO 2/β-Ga 2 O3肖特基结的低损耗开关特性。经过10（8）次开关循环后，肖特基势垒高度保持在1.78eV左右，理想因子保持在1.06左右。PdCoO 2/beta-Ga 2 O3肖特基结具有开关速度快、功耗小、寿命长等优点，适合于高温工作的高频功率器件。
A high-frequency diode is an essential component in electrical circuits providing the current rectification function for AC/DC converters, radio frequency detectors, and automotive inverters. Schottky barrier diodes based on wide-bandgap semiconductors are promising for the high-frequency applications owing to short reverse recovery time that minimizes the energy dissipation during the switching. In this study, we report dynamic characteristics of Schottky junctions composed of a layered oxide metal PdCoO2 and an n-type beta -Ga2O3 substrate. Rectifying current-voltage characteristics with reasonably small hysteresis were demonstrated up to a high frequency of 3MHz in the PdCoO2/beta -Ga2O3 Schottky junctions. For the on-state to off-state switching with the current ramp rate of approximately -2x10(10) A/scm(2), the reverse recovery time was as short as 11ns. The short reverse recovery time was constantly obtained in the operation temperature range of 25-350 degrees C, showing low-loss switching properties of the PdCoO2/beta -Ga2O3 Schottky junctions. The Schottky barrier height of similar to 1.78eV and the ideality factor of similar to 1.06 were maintained after the 10(8)-times on-off switching cycles. The fast switching with less energy dissipation and high durability of the PdCoO2/beta -Ga2O3 Schottky junctions would be suitable for application in high-frequency power devices operating at high temperature.