A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor
A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor
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DOI：
10.1109/jssc.2006.870753
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发表时间：
2006-04-01
影响因子：
5.4
通讯作者：
Mizobuchi, K
中科院分区：
文献类型：
--
作者：
Akahane, N;Sugawa, S;Mizobuchi, K
在像素中具有横向溢出积分电容器的CMOS图像传感器中，该横向溢出积分电容器在相同曝光期间积分来自全耗尽光电二极管的溢出电荷，通过引入新的像素电路及其操作，改善了非饱和信号的灵敏度和饱和溢出信号的线性度。CMOS图像传感器的浮置扩散电容与四晶体管型CMOS图像传感器的浮置扩散电容一样小，因为横向溢出积分电容器位于复位开关旁边。通过0.35 μ m双多晶硅三金属CMOS工艺制造的1/3英寸NIGA格式（640（H）× 480（V）像素）、7.5 × 7.5 μ m（2）像素彩色CMOS图像传感器产生100 dB动态范围特性，具有改进的灵敏度和线性度。
In a CMOS image sensor featuring a lateral overflow integration capacitor in a pixel, which integrates the overflowed charges from a fully depleted photodiode during the same exposure, the sensitivity in nonsaturated signal and the linearity in saturated overflow signal have been improved by introducing a new pixel circuit and its operation. The floating diffusion capacitance of the CMOS image sensor is as small as that of a four transistors type CMOS image sensor because the lateral overflow integration capacitor is located next to the reset switch. A 1/3-inch NIGA format (640(H) x 480(V) pixels), 7.5 x 7.5 mu m(2) pixel color CMOS image sensor fabricated through 0.35-mu m two-poly three-metal CMOS process results in a 100 dB dynamic range characteristic, with improved sensitivity and linearity.