Controlled Interaction of Surface Quantum-Well Electronic States
Controlled Interaction of Surface Quantum-Well Electronic States
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DOI：
10.1021/nl403459m
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发表时间：
2013-12-01
期刊：
影响因子：
10.8
通讯作者：
Barth, Johannes V.
中科院分区：
文献类型：
--
作者：
Seufert, Knud;Auwaerter, Willi;Barth, Johannes V.
我们报告的建设明确界定的表面量子阱安排相结合的自组装协议和分子操作程序。在受控地从Ag（111）上的密集排列中去除单个卟啉分子之后，表面态电子被限制在裸露的银片上。这些作为量子威尔斯，显示明确定义的未占用的束缚表面状态。利用扫描隧道光谱和互补边界元方法计算了相邻量子威尔斯阱的束缚态之间的相互作用，揭示了导致成键态和反键态的波函数的杂化。阱间耦合可以通过有意选择充当势垒的分子来调节。的制造方法被证明是非常适合工程师的特定配置作为一维链或二维人工分子。
We report on the construction of well-defined surface quantum well arrangements by combining self-assembly protocols and molecular manipulation procedures. After the controlled removal of individual porphyrin molecules from dense-packed arrays on Ag(111), the surface state electrons are confined at the bare silver patches. These act as quantum wells that show well-defined unoccupied bound surface states. Scanning tunneling spectroscopy and complementary boundary element method calculations are performed to characterize the interaction between the bound states of adjacent quantum wells and reveal a hybridization of Wave functions resulting in bonding and antibonding states. The interwell coupling can be tuned by the deliberate choice of the molecules acting as potential barriers. The fabrication method is shown to be ideally suited to engineer specific configurations as one-dimensional chains or two-dimensional artificial molecules.