Charge state and diffusivity of muonium in n-type GaAs.
Charge state and diffusivity of muonium in n-type GaAs.
复制标题
n 型 GaAs 中锷的电荷态和扩散率。
DOI：
10.1103/physrevb.50.1999
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Tanigawa
中科院分区：
文献类型：
--
作者：
Kadono;Matsushita;Nagamine;Nishiyama;Chow;Kiefl;Macfarlane;Schumann;Fujii;Tanigawa
The presence of Si donors in GaAs exerts a strong influence on the charge state and diffusion of muonium at the tetrahedral interstitial site (Mu T 0), while it has relatively weak effect on the bond-center muonium (Mu BC 0). In metallic GaAs: Si, the highly mobile Mu T 0 center observed in nonmetallic GaAs is replaced by a charged species (probably Mu−) which shows a diffusion rate at least 10− 2 times smaller than the Mu T 0 center. The Mu BC 0 center is metastable and its transition to Mu T 0 or Mu− centers (depending on doping concentration) is seen in the 50–150-K range. The current results also suggest that the Mu T 0 state undergoes fast spin-exchange interaction with conductive carriers prior to the transition Mu T 0→ Mu−.
