EPITAXIAL-GROWTH OF SOL-GEL PLZT THIN-FILMS
EPITAXIAL-GROWTH OF SOL-GEL PLZT THIN-FILMS
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DOI：
10.1557/jmr.1994.0420
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发表时间：
1994-02-01
影响因子：
2.7
通讯作者：
NO, K
中科院分区：
文献类型：
--
作者：
YOON, DS;KIM, CJ;NO, K
采用金属有机溶液旋涂法在不同单晶衬底上制备了锆钛酸铅镧[PLZT（9/50/50）]薄膜。使用直接插入法将膜在700 ° C下热处理1小时。薄膜外延生长的（100），（100），和（110）分别平行于SrTiO 3（100），MgO（100），和蓝宝石（01 $（$）在酒吧$$12）衬底。使用X射线衍射，极图，摇摆曲线，和扫描电子显微镜的薄膜的外延进行了研究。
Epitaxial lead lanthanum zirconate titanate [PLZT(9/50/50)] thin films were fabricated on various single crystal substrates using the spin coating of metallo-organic solutions. The films were heat-treated at 700 degrees C for 1 h using the direct insertion method. The films were epitaxially grown with (100), (100), and (110) being parallel to the SrTiO3(100), the MgO(100), and the sapphire (01 $($) over bar$$ 12) substrates, respectively. The epitaxy of the films was investigated using x-ray diffraction, pole figures, rocking curves, and scanning electron microscopy.