Enhancing the efficiency of the intermediate band solar cells by introducing: carrier losses, alloying and strain
Enhancing the efficiency of the intermediate band solar cells by introducing: carrier losses, alloying and strain
复制标题
通过引入载流子损失、合金化和应变来提高中波段太阳能电池的效率
DOI：
10.1049/iet-opt.2016.0056
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发表时间：
2017
影响因子：
1.6
通讯作者：
Wang Q
中科院分区：
文献类型：
--
作者：
Wang Q
详细的平衡模型用于确定中间带太阳能电池的效率，包括来自中间带的载流子损失。的主机半导体的能隙的效果被检查作为在能隙和主机半导体能隙中的中间带位置的函数。通常，最佳中间带水平在能隙内减小以减轻载流子损耗，并且载流子损耗对小能隙材料的危害较小。因此，我们专注于宽带隙半导体中间带太阳能电池系统中的载流子损耗的作用，如GaN半导体与Mn杂质带。实验上GaN能带中Mn的受主能级比价带高1.8 eV，与理想中间带相差199 meV，效率降低到21.36%.我们演示了如何载波损耗可以引入到系统中，以改变最佳的IB位置。引入载流子损耗使最佳中间带位置移动到价带以上1.8eV，效率提高到23.41%。我们将此与合金化GaN和引入双轴应变以移动Mn杂质带的有效位置对效率的影响进行比较。
A detailed balance model is used to determine the efficiency of intermediate band solar cell including carrier losses from the intermediate band. The effect of the energy gap of the host semiconductor is examined as a function of the intermediate band position in the energy gap and the host semiconductor energy gap. Generally the optimal intermediate band level decreases within the energy gap to mitigate the carrier losses, and carrier losses are less detrimental to small energy gap materials. We therefore focus on the role of carrier losses in wide bandgap semiconductor intermediate band solar cell systems, such as the GaN semiconductor with an Mn impurity band. Experimentally Mn acceptor level in the GaN energy gap is 1.8 eV above the valence band, which is 199 meV off the ideal intermediate band and reduces the efficiency to 21.36%. We demonstrate how carrier losses can be introduced into the system to shift the optimum IB position. Introducing carrier losses shifts the optimal intermediate band position to 1.8 eV above the valence band and increases the efficiency to 23.41%. We compare this to the effect of alloying GaN and introducing biaxial strain to shift the effective position of the Mn impurity band on the efficiency.
量子点中带太阳能电池的建模：中带线宽展宽的影响
影响因子：
1.6
作者：
Wang Q
通讯作者：
Wang Q