Reduction of Defect Density of ZnCdSe on InP Substrates by Introducing BeZnTe Buffer Layers
Reduction of Defect Density of ZnCdSe on InP Substrates by Introducing BeZnTe Buffer Layers
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通过引入 BeZnTe 缓冲层降低 InP 衬底上 ZnCdSe 的缺陷密度
DOI：
10.1002/1521-3951(200201)229:1
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
K. Kishino
中科院分区：
文献类型：
--
作者：
K. Fukada;I. Nomura;S. Che;E. Ogiwara;A. Kikuchi;K. Kishino
通过引入BeZnTe缓冲层，成功地降低了InP衬底上ZnCdSe的扩展缺陷密度。在BeZnTe缓冲层上生长的ZnCdSe层获得了非常低的蚀刻坑密度（EPD），约为7 x 10 3 cm -3。在15 K的光致发光（PL）测量中，ZnCdSe样品在579 nm附近观察到清晰的发射光谱，没有任何深能级发射。
The extended defect density of ZnCdSe on InP substrates was successfully reduced by introducing BeZnTe buffer layers. A very low etch pit density (EPD) around 7 x 10 3 cm -3 was obtained for ZnCdSe layers grown on BeZnTe buffer layers. In the photoluminescence (PL) measurements at 15 K for the ZnCdSe sample, sharp emission spectra without any deep-level emissions were observed around 579 nm.