Electronically nonalloyed state of a statistical single atomic layer semiconductor alloy.
Electronically nonalloyed state of a statistical single atomic layer semiconductor alloy.
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DOI：
10.1021/nl303197a
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发表时间：
2012-10
期刊：
影响因子：
10.8
通讯作者：
P. Ebert;S. Landrock;Y. Jiang;K. Wu;E. Wang;R. Dunin‐Borkowski
中科院分区：
文献类型：
--
作者：
P. Ebert;S. Landrock;Y. Jiang;K. Wu;E. Wang;R. Dunin‐Borkowski
利用原子和动量分辨的扫描隧道显微镜和光谱，我们证明了二维（2D）Ga 3 × Ga 3半导体Ga-Si单原子合金层具有原子局域化的电子结构，并且在Si和Ga原子位置上是不同的.没有迹象表明存在相互作用或电子混合以及新合金带结构的形成，就好像没有发生合金化一样。电子本地化追溯到由于合金覆盖层的2D原子限制结构的合金内键的缺乏。
Using atomically and momentum resolved scanning tunneling microscopy and spectroscopy, we demonstrate that a two-dimensional (2D) √3 × √3 semiconducting Ga-Si single atomic alloy layer exhibits an electronic structure with atomic localization and which is different at the Si and Ga atom sites. No indication of an interaction or an electronic intermixing and formation of a new alloy band structure is present, as if no alloying happened. The electronic localization is traced back to the lack of intra alloy bonds due to the 2D atomically confined structure of the alloy overlayer.