A new level-shifting structure with multiply metal rings by divided RESURF technique ∗
A new level-shifting structure with multiply metal rings by divided RESURF technique ∗
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DOI：
10.1088/1674-4926/30/4/044005
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发表时间：
2009-04
影响因子：
5.1
通讯作者：
Liu Ji-zhi;Chen Xmgbi
中科院分区：
文献类型：
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作者：
Liu Ji-zhi;Chen Xmgbi
提出了一种新的横向n-MOST结构和一种新的基于分区RESURF技术的多金属环（MMR）电平移位结构。利用MEDICI软件对该结构的器件性能和电学性能进行了分析和模拟。与之前使用的具有多浮置场板（MFFP）的电平移位结构相比，这里所述的结构提高了可靠性，并且减小了高侧栅极驱动器的电源的电压与电平移位结构的输出端子的电压之间的电压差，该电平移位结构的输出端子的电压也是高侧栅极驱动器的输入端子的电压。本文提出的电平转换结构的最大电压差比以前的结构降低了30%。因此，获得了良好的电压隔离和电流隔离。该结构可用于各种应用的电平移位电路中。
A new structure of a lateral n-MOST and a new level-shifting structure with multiply metal rings (MMRs) by divided RESURF technique have been proposed. The device and electrical performances of the structure are analyzed and simulated by MEDICI. In comparison to the level-shifting structure with multiply floating field plates (MFFPs) used before, the structure stated here improves the reliability and diminishes the voltage difference between the voltage of the power supply of the high-side gate driver and the voltage of the output terminal of the level-shifting structure, which is also that of the input terminal of the high-side gate driver. The maximal voltage difference of the level-shifting structure in this paper is 30% lower than that used before. Therefore, good voltage isolation and current isolation are obtained. The structure can be used in the level-shifting circuit of various applications.