Development and process control of magnetic tunnel junctions for magnetic random access memory devices
Development and process control of magnetic tunnel junctions for magnetic random access memory devices
复制标题
磁性随机存取存储器件的磁性隧道结的开发和过程控制
DOI：
10.1063/1.1558241
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
William W. C. Koutny
中科院分区：
文献类型：
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作者：
W. Kula;J. Wolfman;K. Ounadjela;Eugene Chen;William W. C. Koutny
我们报告了用于磁性随机存取存储器 (MRAM) 器件的磁性隧道结 (MTJ) 的开发和过程控制。结果表明，可以开发出具有高磁阻~40%（300 mV）、电阻面积积（RA）~1-3 kΩ μm2、低本征层间耦合（Hin）~2-3 Oe以及出色的位开关特性的MTJ，并将其与互补金属氧化物半导体电路完全集成到MRAM器件中。先进的加工和监控技术已证明适合大规模生产的MTJ均匀性和重复性水平。
We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ∼40% at 300 mV, resistance–area product (RA) ∼1–3 kΩ μm2, low intrinsic interlayer coupling (Hin) ∼2–3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal–oxide–semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques.