High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes
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DOI：
10.1038/nnano.2007.77
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发表时间：
2007-04-01
影响因子：
38.3
通讯作者：
Rogers, John A.
中科院分区：
文献类型：
--
作者：
Kang, Seong Jun;Kocabas, Coskun;Rogers, John A.
单壁碳纳米管（SWNTs）具有许多特殊的电子性质。实现在现实的电子系统中的单壁碳纳米管的全部潜力，需要一个可扩展的方法来设备和电路集成。我们报告使用的长，完美的线性SWNTs作为一个有效的薄膜半导体适合集成到晶体管和其他类别的电子器件的密集，完全对齐的阵列。大量的单壁碳纳米管能够实现优异的器件级性能特性和良好的器件间均匀性，即使单壁碳纳米管是电子异质的。对涉及多达2，100个SWNT的p沟道和n沟道晶体管的测量显示，器件级迁移率和比例跨导分别接近1，000 cm（2）V-1 s（-1）和3，000 S m（-1），并且在使用叉指电极的器件中，电流输出高达1 A。PMOS和CMOS逻辑门以及塑料上的机械柔性晶体管提供了可以用这种方法形成的器件的示例。总的来说，这些结果可能代表了一条通往大规模集成纳米管电子器件的道路。
Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices. The large number of SWNTs enable excellent device-level performance characteristics and good device-to-device uniformity, even with SWNTs that are electronically heterogeneous. Measurements on p- and n-channel transistors that involve as many as similar to 2,100 SWNTs reveal device-level mobilities and scaled transconductances approaching similar to 1,000 cm(2) V-1 s(-1) and similar to 3,000 S m(-1), respectively, and with current outputs of up to similar to 1 A in devices that use interdigitated electrodes. PMOS and CMOS logic gates and mechanically flexible transistors on plastic provide examples of devices that can be formed with this approach. Collectively, these results may represent a route to large-scale integrated nanotube electronics.