Flat band in twisted bilayer Bravais lattices

Flat band in twisted bilayer Bravais lattices
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DOI:
10.1103/physrevresearch.1.033076
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发表时间:
2019-11-05
影响因子:
4.2
通讯作者:
Vishwanath, Ashvin
Vishwanath, Ashvin
中科院分区:
其他
文献类型:
--
作者:
Kariyado, Toshikaze;Vishwanath, Ashvin

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Band engineering in twisted bilayers of the five generic two-dimensional Bravais networks is demonstrated. We first derive constraints on the interlayer coupling that determines an effective potential for low-energy physics. The constraints are originated from symmetry and fixed without reference to microscopic details. Having the constraints on the potential helps us to predict and understand electron behavior under the influence of the moire structure, like formation of flat bands. It is also pointed out that the generic constraints become most relevant when the typical length scale of the microscopic interlayer coupling is moderate. The concepts are numerically tested in simple tight-binding models, showing the band flattening compatible with the potential profile fixed by the generic constraints. On the basis of the generic theory, we propose a possibility of anisotropic band flattening, in which quasi-one-dimensional band dispersion is generated from relatively isotropic original band dispersion. In the strongly correlated regime, the anisotropic band flattening leads to a spin-orbital model where intertwined magnetic and orbital ordering can give rise to rich physics. Overall, our theory and demonstration give useful information for screening out interesting materials from the material database.