Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer
Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer
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DOI：
10.7567/jjap.57.04fr01
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发表时间：
2018-02
影响因子：
1.5
通讯作者：
Tsubasa Matsumoto;H. Kato;T. Makino;M. Ogura;D. Takeuchi;S. Yamasaki;M. Imura;A. Ueda;T. Inokuma;N. Tokuda
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文献类型：
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作者：
Tsubasa Matsumoto;H. Kato;T. Makino;M. Ogura;D. Takeuchi;S. Yamasaki;M. Imura;A. Ueda;T. Inokuma;N. Tokuda
为进一步研究金刚石基半导体材料，研究了Al 2 O3/p型金刚石（111）MOS电容器的电学特性。为了确认在p型金刚石体中形成反型层，将用作少数载流子注入层的n型层选择性地沉积到p型金刚石上。为了形成金刚石MOS电容器，使用原子层沉积将Al 2 O3沉积到OH终止的金刚石上。MOS电容器在10 Hz下显示出明显的反型电容。从n型层注入的少数载流子到达反型n沟道金刚石MOS场效应晶体管（MOSFET）。使用高低频率电容法，从价带边缘能量Ev开始的0.1- 0.5eV的能量范围内的界面态密度Dit估计为（4-9）× 1012 cm−2 eV−1。然而，Ev附近的高Dit仍然是提高反型p沟道金刚石MOSFET的场效应迁移率的障碍。
The electrical properties of Al2O3/p-type diamond (111) MOS capacitors were studied with the goal of furthering diamond-based semiconductor research. To confirm the formation of an inversion layer in the p-type diamond body, an n-type layer for use as a minority carrier injection layer was selectively deposited onto p-type diamond. To form the diamond MOS capacitors, Al2O3 was deposited onto OH-terminated diamond using atomic layer deposition. The MOS capacitor showed clear inversion capacitance at 10 Hz. The minority carrier injection from the n-type layer reached the inversion n-channel diamond MOS field-effect transistor (MOSFET). Using the high-low frequency capacitance method, the interface state density, Dit, within an energy range of 0.1–0.5 eV from the valence band edge energy, Ev, was estimated at (4–9) × 1012 cm−2 eV−1. However, the high Dit near Ev remains an obstacle to improving the field effect mobility for the inversion p-channel diamond MOSFET.