Electrical edge effect induced photocurrent overestimation in low-light organic photovoltaics
Electrical edge effect induced photocurrent overestimation in low-light organic photovoltaics
复制标题
低光有机光伏中电边缘效应引起的光电流高估
DOI:
10.1016/j.joule.2022.06.008
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发表时间:
2022
期刊:
影响因子:
39.8
通讯作者:
Wei Ma
中科院分区:
文献类型:
--
作者:
Xiaobo Zhou;Chao Zhao;Awwad Nasser Alotaibi;Hongbo Wu;Hafiz Bilal Naveed;Baojun Lin;Ke Zhou;Zaifei Ma;Brian A. Collins;Wei Ma
Summary In many literatures, the short-circuit current (JSC) of indoor organic photovoltaics is overestimated, leading to severely wrong device performance evaluation and analysis. In this work, based on the equivalent circuit model, we demonstrate that electrical edge effect is sensitive to both transverse surface resistance and light intensity. At low light intensity, the electrical edge effect could lead to JSC being significantly overestimated, i.e., by 100% and even more. We show that for a PM6:Y6 device capped with a MoOX layer, when measured under 0.01 sun, the usually overlooked interface doping mechanism would lead to JSC and PCE overestimation by 51% and 15%, respectively. Besides, we show that the magnitude of JSC overestimation drastically increases with high photoactive-layer surface roughness. This work emphasized the significant electrical edge effect on JSC evaluations for low-light solar cells and is conducive to understanding the intrinsic mechanism of edge effect, promoting a healthier development of organic photovoltaics.