Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy
Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy
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DOI：
10.1063/1.4980093
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发表时间：
2017-04
影响因子：
4
通讯作者：
H. Hirai;K. Kita
中科院分区：
文献类型：
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作者：
H. Hirai;K. Kita
采用红外光谱法研究了热生长SiO2/4H-SiC界面上干氧氧化和水氧化近界面氧化物的结构差异。我们发现H2O氧化导致SiO2在近界面区的本征应变较dry-O2氧化显著降低，而dry-O2氧化的本征应变不受氧化温度和O2分压变化的影响。在近界面区观察到的水氧化峰宽度也比干氧氧化小，这表明形成的氧化物在微观结构上更均匀。不同氧化剂制备的金属氧化物半导体电容器的特性有明显差异，表明近界面氧化物的应变与近界面氧化物陷阱的形成有很强的相关性。
Structural difference of near-interface oxides at thermally grown SiO2/4H-SiC interfaces between dry-O2 oxidation and H2O oxidation was investigated using infrared spectroscopy for both on Si- and C-faces. We found that H2O oxidation results in a significant reduction of the intrinsic strain of SiO2 in the near-interface region compared to dry-O2 oxidation, while such strain was not affected by the change of oxidation temperature and O2 partial pressure in the case of dry-O2 oxidation. The peak broadness observed in the near-interface region was also smaller for H2O oxidation than for dry-O2 oxidation, which indicated a formation of an oxide with more uniformity in microscopic structures. A strong correlation between the strain of near-interface oxides and the formation of near-interface oxide traps was suggested from the clear difference of the characteristics of metal-oxide-semiconductor capacitors fabricated with different oxidants.