Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
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DOI：
10.1063/1.4954236
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发表时间：
2016-06-20
影响因子：
4
通讯作者：
Oliver, R. A.
中科院分区：
文献类型：
--
作者：
Davies, M. J.;Dawson, P.;Oliver, R. A.
我们报告了在T = 10 K时极性和非极性InGaN量子阱结构中效率下降的比较研究。为了确保对于任何特定的激发功率密度都用相同的载流子密度进行实验，我们使用了持续时间类似于100 fs的激光脉冲，重复频率为400 kHz。对于这两种类型的结构，观察到效率下降发生在载流子密度高于7 × 10（11）cm（-2）脉冲（-1）每个量子阱;两种结构也表现出类似的光谱展宽的下降制度。这些结果表明，效率下降在InGaN量子威尔斯阱中是固有的，无论是极性的还是非极性的，并且是载流子密度的函数。(C)2016年作者。所有文章内容，除非另有说明，是根据知识共享署名（CC BY）许可证（http：//creativecommons.org/licenses/by/4.0/）。
We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration similar to 100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 x 10(11) cm(-2) pulse(-1) per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).