The Integrated Stress Response: A Central Memory Switch in Down Syndrome.
The Integrated Stress Response: A Central Memory Switch in Down Syndrome.
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综合压力反应：唐氏综合症的中央记忆开关。
DOI：
10.1016/j.cmet.2019.12.008
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发表时间：
2020
期刊：
影响因子：
29
通讯作者：
Frias,ElmaS
中科院分区：
文献类型：
--
作者：
Rosi,Susanna;Frias,ElmaS
遗传和药理学证据表明，综合应激反应（ISR）是不同物种形成长期记忆的核心分子开关。Zhu等人（2019）最近证明，ISR的持续激活可以解释唐氏综合症小鼠模型的长期记忆和突触可塑性缺陷，唐氏综合症是智力残疾最常见的遗传原因。
Genetic and pharmacological evidence causally demonstrate that the integrated stress response (ISR) is a central molecular switch for long-term memory formation across different species. Zhu et al. (2019) recently demonstrated that persistent activation of the ISR could explain the long-term memory and synaptic plasticity deficits in a mouse model of Down syndrome, the most common genetic cause of intellectual disability.