Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC
Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC
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DOI：
10.1016/j.nima.2008.08.019
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发表时间：
2009-01-01
影响因子：
1.4
通讯作者：
Casse, Gianluigi
中科院分区：
文献类型：
--
作者：
Casse, Gianluigi
RD 50合作自2002年以来一直在探索为超高光度对撞机开发抗辐射半导体器件。欧洲核子研究中心大型强子对撞机（LHC）未来升级的最内层跟踪层的预期剂量设定的合格探测器的目标通量为10（16）1 MeV中子当量（n（eq））cm（-2）。这比当前机器中暴露最多的硅探测器的最大剂量高出一个数量级。RD 50从多个角度研究了硅传感器的辐射硬化：衬底材料固有公差的改进，读出几何形状的优化和探测器新设计的研究。本文介绍了RD 50中的一些近期活动。(C)2008 Elsevier B. V.保留所有权利。
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 10(16) 1 MeV neutron equivalent (n(eq)) cm(-2). This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented. (C) 2008 Elsevier B.V. All rights reserved.