Signatures of topological order in ballistic bulk transport of HgTe quantum wells
Signatures of topological order in ballistic bulk transport of HgTe quantum wells
复制标题
DOI：
10.1103/physrevb.81.241303
复制
发表时间：
2009-12
影响因子：
3.7
通讯作者：
E. Novik;P. Recher;E. Hankiewicz;B. Trauzettel
中科院分区：
文献类型：
--
作者：
E. Novik;P. Recher;E. Hankiewicz;B. Trauzettel
我们计算了基于碲化汞量子威尔斯阱的二维拓扑绝缘体在弹道机制下的体输运性质。有趣的是，我们发现，电导和散粒噪声是明显不同的所谓的正常制度（拓扑平凡的情况下）和所谓的倒置制度（拓扑非平凡的情况下）。因此，不仅可以通过可观察的边缘性质，而且可以通过可观察的体性质来验证二维拓扑绝缘体的拓扑序。这是很重要的，因为我们表明，在某些条件下，批量的贡献可以占主导地位的边缘贡献，这使得它有必要充分了解前者的解释未来的实验在干净的样品。
We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the so-called normal regime (the topologically trivial case) and the so-called inverted regime (the topologically non-trivial case). Thus, it is possible to verify the topological order of a two-dimensional topological insulator not only via observable edge properties but also via observable bulk properties. This is important because we show that under certain conditions the bulk contribution can dominate the edge contribution which makes it essential to fully understand the former for the interpretation of future experiments in clean samples.