High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors.
High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors.
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DOI：
10.1021/acsnano.6b05109
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发表时间：
2016-09-27
期刊：
影响因子：
17.1
通讯作者：
Ferrari AC
中科院分区：
文献类型：
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作者：
De Fazio D;Goykhman I;Yoon D;Bruna M;Eiden A;Milana S;Sassi U;Barbone M;Dumcenco D;Marinov K;Kis A;Ferrari AC
我们提出了一种柔性可见波长光电探测器（pd），它是通过将厘米级化学气相沉积（CVD）单层石墨烯（SLG）和单层CVD MoS2堆叠在一起制成的，两者都湿转移到柔性聚对苯二甲酸乙二醇酯衬底上。操作机制依赖于从MoS2注入光激发电子到SLG通道。在642nm时，外部响应度为45.5A/W，内部响应度为570A/W。这比块体半导体柔性膜至少高出2个数量级。光导增益可达4 × 105。光电流范围为0.1 ~ 100 μA。该器件是半透明的，在642nm处具有8%的吸收率，并且在弯曲到1.4 cm的曲率时稳定。这些功能和低电压操作（<1 V）使它们对可穿戴应用具有吸引力。
We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642 nm. This is at least 2 orders of magnitude higher than bulk-semiconductor flexible membranes. The photoconductive gain is up to 4 × 105. The photocurrent is in the 0.1–100 μA range. The devices are semitransparent, with 8% absorptance at 642 nm, and are stable upon bending to a curvature of 1.4 cm. These capabilities and the low-voltage operation (<1 V) make them attractive for wearable applications.