Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons
Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons
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DOI：
10.1109/23.650863
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发表时间：
1997-12-01
影响因子：
1.8
通讯作者：
Korde, R
中科院分区：
文献类型：
--
作者：
Funsten, HO;Suszcynsky, DM;Korde, R
电子辐照具有100%内量子效率的具有薄（60埃）SiO2死层导致测量的响应度范围从入射电子能量E-0 = 0.2 keV时的0.056 A/W到E-0 = 40 keV时的0.24 A/W，通过将数据与在1-40 keV的能量范围内电子与光电二极管相互作用的蒙特卡罗模拟进行比较，我们推导出平均电子-空穴对产生能量为3.71 eV，与其他研究结果非常一致。对不有助于电子-空穴对产生的过程的电子能量损失的分析表明，对于E-0 < 1.5 keV，SiO2死层中的能量损失占主导地位，而对于E-0 > 1.5 keV，由背散射电子去除的能量占主导地位。在E-0 = 300 eV时，MonteCarlo模拟结果表明，即使测得的响应为0.082A/W，电子投射范围也明显小于死层厚度，表明在氧化物死层中产生的电子-空穴对被结收集。
Electron irradiation of 100% internal quantum efficiency silicon photodiodes having a thin (60 Angstrom) SiO2 dead layer results in measured responsivities ranging from 0.056 A/W at an incident electron energy E-0 = 0.2 keV to 0.24 A/W at E-0 = 40 keV, By comparing the data to a Monte Carlo simulation of electron interactions with the photodiode over an energy range of 1-40 keV, we derive an average electron-hole pair creation energy of 3.71 eV, in close agreement with other studies. Analysis of electron energy lost to processes that do not contribute to electron-hole pair creation shows that the energy lost in the SiO2 dead layer is dominant for E-0 < 1.5 keV, whereas the energy removed by backscattered electrons is dominant for E-0 > 1.5 keV, At E-0 = 300 eV, the Monte Carlo simulation results show that the electron projected range is significantly less than the dead layer thickness even though the measured response is 0.082 A/W, indicating that electron-hole pairs generated in the oxide dead layer are collected by the junction.