Impact of ion energy on single-event upset
Impact of ion energy on single-event upset
复制标题
离子能量对单粒子翻转的影响
DOI：
10.1109/23.736489
复制
发表时间：
1998
影响因子：
1.8
通讯作者：
P. Winokur
中科院分区：
文献类型：
--
作者：
P. Dodd;O. Musseau;M. Shaneyfelt;F. Sexton;C. D'hose;G. L. Hash;M. Martinez;R. A. Loemker;J. Leray;P. Winokur
用低能和高能重离子辐照CMOS SRAM，研究了离子能量对单粒子翻转的影响。研究了各种CMOS SRAM技术，栅极长度范围从1到0.5 μ/m，集成密度从16 Kbit到1 Mbit。在低能量和高能量的单事件不安反应之间没有观察到显著差异。结果是一致的模拟重离子的轨道结构，显示中心的轨道结构的前几乎是相同的低，高能量离子。三维模拟证实，在这两种情况下，电荷收集是相似的。标准的低能重离子测试更具成本效益，似乎足以满足CMOS技术低至0.5 /spl mu/m的要求。我们讨论深亚微米尺度，多位翻转，和硬度保证的影响。
The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 /spl mu/m and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed between the low and high-energy single-event upset response. The results are consistent with simulations of heavy-ion track structures that show the central fore of the track structures are nearly identical for low and high-energy ions. Three-dimensional simulations confirm that charge collection is similar in the two cases. Standard low-energy heavy ion tests are more cost-effective and appear to be sufficient for CMOS technologies down to 0.5 /spl mu/m. We discuss implications for deep submicron scaling, multiple-bit upsets, and hardness assurance.