Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode
Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode
复制标题
零偏置 InP/InGaAs 费米能级管理势垒二极管对太赫兹波的低噪声零差检测
DOI：
10.1587/elex.14.20170722
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
T. Ishibashi
中科院分区：
文献类型：
--
作者：
Hiroshi Ito;T. Ishibashi
首次研究了零偏置费米能级管理势垒（FMB）二极管对太赫兹（THz）波的零差探测，揭示了FMB二极管混频探测的基本特性。在300 GHz时，本振功率仅为5 × 10 W，噪声等效功率为1.6 × 10 W/ Hz。
Homodyne detection of terahertz (THz) waves by a zero-biased Fermi-level managed barrier (FMB) diode was investigated for the first time to reveal its fundamental characteristics in the mixing detection. The lowest noise equivalent power of 1.6 10 W/ Hz was obtained at 300 GHz with a very low local oscillator power of 5 10 W.