Analysis of edge recombination for high-efficiency solar cells at low illumination densities
Analysis of edge recombination for high-efficiency solar cells at low illumination densities
复制标题
低照度下高效太阳能电池边缘复合分析
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
G. Willeke
中科院分区：
文献类型：
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作者：
M. Hermle;J. Dicker;W. Warta;S. Glunz;G. Willeke
高效硅太阳能电池的室内应用涉及显著低于1个太阳的照明密度。我们的研究表明，在低光照密度，太阳能电池是非常敏感的复合在电池边缘。我们已经分析了不同的复合通道在周边通过二维器件模拟和实验。模拟表明，在低光照密度下，周边的主要复合通道是由于空间电荷区的表面复合。通过比较模拟和测量的开路电压，可以提取电池周边的表面复合速度。我们的研究表明，周长损失可以大大减少通过优化的钝化方案。
Indoor applications of high-efficiency silicon solar cells implicate illumination densities that are significantly below 1 sun. Our investigations show that at low illumination densities, solar cells are very sensitive to the recombination at the cell edges. We have analyzed the different recombination channels at the perimeter by means of two-dimensional device simulation and experiments. The modeling shows, that at low illumination densities the main recombination channel at the perimeter is due to the surface recombination in the space charge region. The surface recombination velocity at the cell perimeter could be extracted by comparison of the simulated and measured open-circuit voltages. Our investigation shows that the perimeter loss can be reduced drastically by an optimized passivation scheme.