Study of la-induced flat band voltage shift in Metal/HfLaOx/SiO2/Si capacitors

Study of la-induced flat band voltage shift in Metal/HfLaOx/SiO2/Si capacitors
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DOI：
10.1143/jjap.46.7251
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发表时间：
2007-11-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
通讯作者：
Toriumi, Akira
Toriumi, Akira
中科院分区：
其他
文献类型：
--
作者：
Yamamoto, Yoshiki;Kita, Koji;Toriumi, Akira

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研究了金属/HfLaOx/SiO2/Si 电容器中的平带电压与 HfLaOx 中 La 浓度的函数关系。我们发现随着La浓度的增加，平带电压向负方向移动。此外，我们证明该系统中的平带电压由 HfLaOx/SiO2 界面处的 La 浓度决定。该结果表明，平带电压偏移是由于 HfLaOx/SiO2 界面处形成的偶极层而不是金属/HfLaOx 界面处的费米能级钉扎所致。
The flat band voltage in metal/HfLaOx/SiO2/Si Capacitors has been investigated as a function of La concentration in HfLaOx. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOx/SiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaOx/SiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.