Intrinsic electron traps in atomic-layer deposited HfO2 insulators
Intrinsic electron traps in atomic-layer deposited HfO2 insulators
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DOI：
10.1063/1.4952718
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发表时间：
2016-05-30
影响因子：
4
通讯作者：
Stesmans, A.
中科院分区：
文献类型：
--
作者：
Cerbu, F.;Madia, O.;Stesmans, A.
对原子层沉积生长的 HfO2 薄膜中电子陷阱的光致消散分析表明，可以提供整个氧化物带隙上的陷阱能量分布。揭示了两种深电子陷阱的存在，其能量分布在氧化物导带下方大约 2.0 eV 的 E-t 和大约 3.0 eV 的 E-t 附近。对使用不同前体制备或经过热处理的 HfO2 层中捕获的电子能量分布进行比较表明，这些中心本质上是本征的。然而，这些涉及 O 空位的常见假设无法解释 HfO2 的充电行为，这表明应考虑替代缺陷模型。由 AIP 出版社出版。
Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E-t approximate to 2.0 eV and E-t approximate to 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO2 layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO2, suggesting that alternative defect models should be considered. Published by AIP Publishing.