Sintering temperature dependence of thermoelectric performance in CuCrSe2 prepared via mechanical alloying
Sintering temperature dependence of thermoelectric performance in CuCrSe2 prepared via mechanical alloying
复制标题
机械合金化制备的 CuCrSe2 热电性能与烧结温度的关系
DOI：
10.1016/j.scriptamat.2016.09.016
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发表时间：
2017
影响因子：
6
通讯作者：
Zhou XY
中科院分区：
文献类型：
--
作者：
Yan Yanci;Guo Lijie;Lu Xu;Peng Kunling;Yao Wei;Zhou Xiaoyuan;Peng Kunling;Wang Guoyu;Zhang Zhi;Dai Jiyan;Zhou XY
CuCrSe2compounds were synthesized by mechanical alloying followed by annealing and spark plasma sintering at temperatures of 873 K, 923 K, 973 K and 1023 K. Our investigation revealed that high SPS temperature (above 973 K) is the key to obtaining CuCrSe2single phase completely free of a metallic secondary phase CuCr2Se4. The ultralow thermal conductivity caused by the Cu ions disorder, complex layered structure and dislocation leads to the favorable thermoelectric performance in CuCrSe2compound. A maximumZTvalue over 0.75@873 K is achieved in the absolutely pure sample sintered at 1023 K.
