Reduction of capillary force for high-aspect ratio nanofabrication
Reduction of capillary force for high-aspect ratio nanofabrication
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DOI：
10.1007/s00339-005-3337-7
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发表时间：
2005-12-01
影响因子：
2.7
通讯作者：
Misawa, H
中科院分区：
文献类型：
--
作者：
Kondo, T;Juodkazis, S;Misawa, H
为了获得特征尺寸为100 nm的高深宽比图形，对SU8抗蚀剂的湿法工艺进行了改进。最后在水中漂洗，使抗蚀剂上有较大的接触角(较少润湿)。这使得导致三维(3D)光刻中图案失真的毛细管力显著减小。利用这种改进的显影方法，利用飞秒脉冲在SU8抗蚀剂上实现了高深宽比(f(Ar)=18)结构的三维记录。自支撑面的厚度约为100 nm。通过将莫尔图案转换成显影的SU8图案来确认该记录方法的高保真度。在聚焦方面，100 nm特征尺寸占衍射极限的1/13。这种改进的开发适用于不能使用超临界干燥的湿处理。
The wet processing of SU8 resist was modified in order to achieve a high-aspect ratio patterning with feature size of 100 nm. A final rinse in water, which makes a large contact angle on the resist (less wetting) was added to the procedure. This allowed considerable reduction of the capillary force, which is responsible for pattern distortions in three-dimensional (3D) lithography. 3D recording of high-aspect ratio (f(ar)=18) structures by holographic exposure using femtosecond pulses in SU8 resist was achieved using this modified development procedure. The thickness of the free-standing planes was approximately 100 nm. High fidelity of this recording method was confirmed by a Moire pattern transfer into a developed SU8 pattern. In terms of focusing, the 100 nm feature size comprised 1/13-th of the diffraction limit. This modified development is applicable for wet processing when super-critical drying cannot be used.