A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering
A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering
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DOI：
10.1016/j.surfcoat.2011.03.119
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发表时间：
2011-06-25
影响因子：
5.4
通讯作者：
Barhai, P. K.
中科院分区：
文献类型：
--
作者：
Mukherjee, S. K.;Joshi, L.;Barhai, P. K.
比较研究了阳极真空电弧等离子体沉积法和直流磁控溅射法制备的纳米晶铜薄膜的结构、电学和热电性能。这些薄膜的晶体织构和结构演变的研究作为厚度的函数在30至230 nm的范围内，使用XRD和SEM。AVA沉积的Cu膜具有较小的晶粒，结晶度低于直流溅射的。测量了AVA和直流磁控溅射Cu膜的电阻率、电阻温度系数和热电势，并研究了它们与膜厚的关系。AVA沉积的Cu膜具有小于100 nm的厚度显示出比直流溅射的高得多的电阻率。AVA沉积的铜膜具有较低的电阻值的温度系数比直流溅射的。所观察到的热电势的厚度依赖性是在AVA沉积的铜膜比直流溅射的。这些电气测量表明，AVA沉积的铜膜具有更多的空位比直流溅射的。(C)2011 Elsevier B.V.保留所有权利。
A comparative study of structural, electrical and thermoelectric properties of nanocrystalline copper thin films deposited using anodic vacuum arc plasma deposition technique and dc-magnetron sputtering is presented. The crystallographic texture and structural evolution of these films are investigated as a function of thickness within a range of 30 to 230 nm using XRD and SEM. AVA deposited Cu films possess smaller grains with a lesser degree of crystallinity than dc-sputtered ones. Electrical resistivity, temperature coefficient of resistance and thermoelectric power of both as-deposited and annealed Cu films of AVA and dc-magnetron sputtering is measured and their dependence on the film thickness is investigated. AVA deposited Cu films having thickness less than 100 nm show much higher resistivity than dc-sputtered ones. AVA deposited Cu films possess lower temperature coefficient of resistance values than dc-sputtered ones. The observed thickness dependence of thermoelectric power is larger in AVA deposited Cu films than in dc-sputtered ones. These electrical measurements reveal that AVA deposited Cu films possess more vacancies than dc-sputtered ones. (C) 2011 Elsevier B.V. All rights reserved.