Total-reflection X-ray fluorescence analysis and related methods
Total-reflection X-ray fluorescence analysis and related methods
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DOI：
10.1016/0165-9936(96)89223-5
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发表时间：
1996-10
期刊：
影响因子：
--
通讯作者：
R. Klockenkämper;A. Bohlen
中科院分区：
文献类型：
--
作者：
R. Klockenkämper;A. Bohlen
第六届全反射X射线荧光分析及相关方法会议（TXRF '96）于1996年6月10日至14日在埃因霍温（荷兰）和多特蒙德（德国）举行，由飞利浦研究实验室埃因霍温和光谱化学与应用研究所（ISAS）与皇家化学学会（KNCV）和德国化学协会合作举办。双重位置确保了与TXRF各个方面蓬勃发展的环境的紧密耦合。此外，在两个地点之间的旅行期间，有可能参观伦琴WC的出生地Remscheid-Lennep。近四分之一的会议专门讨论半导体分析。全反射X射线荧光（TXRF）技术目前广泛应用于半导体表面污染物的测量。对于3d过渡金属，TXRF测量的检测限在10”原子/cm 2的数量级。如果使用气相分解将整个半导体晶片上的污染物收集到小于1cm 2中，则这些值减小两个或三个数量级。半导体TXRF分析的IS 0活动应在一年内产生认证方法。几位作者报道了TXRF光谱中存在的伪峰，这使良好的分析变得复杂。大多数影响都是可以理解的，但在所有情况下都无法避免，可能需要制造商采取适当的措施。用同步辐射代替传统的密封或双阳极X射线管，可进一步提高TXRF的灵敏度。讨论了其他几个同步加速器实验。不仅利用了高强度，而且还利用了入射波长的偏振性和可调谐性。这导致了关于轻元素和各种激发几何形状的TXRF（Streli和Goergl，Atominstitut Austria）、X射线驻波（Bedzyk，阿贡，美国）和全反射X射线光电子能谱（Kawai，京都大学，日本）的论文。会议的另一部分涉及通过TXRF和相关方法进行薄膜分析，以获得层密度，厚度和成分。如果与X射线反射计（Leenaers和Vrakking，Philips，The Netherlands）、离子束溅射（Schwenke和Wiener，GKSS，德国）或激光烧蚀（Quentmeier，ISAS，德国）相结合，则角度依赖型TXRF可以得到加强。除同步辐射外，讨论的其他新技术和仪器包括全反射粒子诱导X射线发射（荷兰阿姆斯特丹自由大学货车Kan）、用于深度剖面和微量及痕量分析的掠射发射XRF（荷兰飞利浦De Bokx;比利时安特卫普大学Claes）、掠射入射和起飞X射线分析（日本东北大学Tsuji，Japan）和通过扫描隧道显微镜（Tsuji，Tohoku Univ.，日本）。会议的后半部分主要致力于TXRE的微量和痕量分析。对于这种分析，将少量含有分析物的材料施加到基底上。在掠入射时，由于在衬底处的散射而导致的背景被最小化。上述以分析物的绝对量表示的检测限，在常规仪器中均在pg范围内。Prange（GKSS，德国）讨论了使用钨合金X射线管和双层单色器改进TXRF仪器，而Prange（GKSS，德国）则评述了探测器技术（锗探测器，数字脉冲处理）的最新发展。
The 6th Conference on Total reflection X-Ray Fluorescence Analysis and Related Methods (TXRF ‘96) was held 10-14 June 1996, in Eindhoven (The Netherlands) and Dortmund (Germany), organised by Philips Research Laboratories Eindhoven and the Institut fur Spektrochemie und Angewandte Spektroskopie (ISAS), in cooperation with the Royal Dutch Chemical Society (KNCV) and the Gesellschaft Deutscher Chemiker. The double location ensured close coupling with environments where the various aspects of TXRF flourish. Moreover, during the trip between the two locations it was possible to visit Remscheid-Lennep, the birth place of WC Roentgen. Nearly a quarter of the conference was devoted to semiconductor analysis. Total reflection X-Ray Fluorescence (TXRF) nowadays is used widely for measuring contaminants on semiconductor surfaces. The detection limits of the TXRF measurements are in the order of 10” atoms/cm2 for 3d transition metals. These values are diminished by two or three orders of magnitude if the contaminants on a whole semiconductor wafer are collected into less than 1 cm2 using vapor phase decomposition. An IS0 activity for semiconductor TXRF analysis should result in a certified method within a year. Several authors reported on the presence of spurious peaks in TXRF spectra which complicate good analysis. Most of the effects are be understood, but they cannot be avoided in all cases and proper action from manufacturers may be required. The sensitivity of TXRF can be improved further by the use of synchrotron radiation instead of a conventional sealed or rotatinganode X-ray tube. Several other synchrotron experiments were discussed. Not only the high intensity, but also the polarization and the tunability of the incident wavelength were exploited. This resulted in papers on TXRF of light elements and with various excitation geometries (Streli and Goergl, Atominstitut Austria), X-ray standing waves (Bedzyk, Argonne, USA) and Total-reflection X-ray Photoelectron Spectroscopy (Kawai, Kyoto University, Japan). Another part of the conference dealt with thin-film analysis by TXRF and related methods to obtain layer density, thickness and composition. Angle-dependent TXRF can be strengthened if combined with X-Ray Reflectometry (Leenaers and Vrakking, Philips, The Netherlands), ion beam sputtering (Schwenke and Wiener, GKSS, Germany) or laser ablation (Quentmeier, ISAS, Germany). Apart from synchrotron radiation, other new techniques and instrumentation discussed include Total-reflection Particle-Induced X-ray Emission (Van Kan, Vrije Univ. Amsterdam, The Netherlands), Grazing-Emission XRF for depth profiling and micro and trace analysis (De Bokx, Philips, The Netherlands; Claes, Univ. Antwerp, Belgium), Glancing-Incidence and Takeoff X-ray Analysis (Tsuji, Tohoku Univ., Japan) and Total-reflection X-ray excited current detected by a Scanning Tunneling Microscope (Tsuji, Tohoku Univ., Japan). The second half of the conference was mainly devoted to micro and trace analysis by TXRE For this kind of analysis a small amount of material containing the analyte is applied onto a substrate. At glancing incidence the background due to scattering at the substrate is minimized. The detection limits mentioned above, expressed as absolute amounts of analyte, are in the pg region for conventional instruments.Improvements of TXRF instrumentation by using a molybdenum-tungsten alloy X-ray tube and a double-multilayer monochromator were discussed by Prange (GKSS, Germany), whereas recent developments in detector technology (germanium detectors, digital pulse processing) were reviewed by …