MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
复制标题
脉冲分子束法 MBE 生长 InGaAlAs 晶格匹配 InP
DOI：
10.1143/jjap.25.l254
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
S. Hiyamizu
中科院分区：
文献类型：
--
作者：
T. Fujii;Y. Nakata;Y. Sugiyama;S. Hiyamizu
采用脉冲分子束MBE技术获得了与磷化铟晶格匹配的高质量InGaAlAs。In_（0.52）（Ga_（1-x）Al_x）_（0.48）As（x=0，0.25，0.5，0.75，1）在4.2 K（4.5，9.0，10.3，13.1，16.2 meV）下获得了非常窄的光致发光谱半高宽（FWHM）。In_（0.52）（Ga_（1-x）Al_x）_（0.48）As的禁带宽度与Al组分x的关系在0 × x × 1范围内呈线性关系。
High-quality InGaAlAs lattice-matched to InP was obtained by MBE with a pulsed molecular beam. Very narrow full width at half maximum (FWHM) of a photoluminescence spectrum at 4.2 K (4.5, 9.0, 10.3, 13.1, 16.2 meV) was obtained for In0.52(Ga1-xAlx)0.48As(x=0, 0.25, 0.5, 0.75, 1). The dependence of the energy band gap of In0.52(Ga1-xAlx)0.48As on Al composition, x, was found to be linear in the range of 0≦x≦1.