Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
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MOVPE 中氮原子层掺杂研究 GaAs 中氮对发光的起源
DOI：
10.1143/jjap.36.1694
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发表时间：
1996
影响因子：
1.5
通讯作者：
Naoki Kobayashi Naoki Kobayashi
中科院分区：
文献类型：
--
作者：
T. Makimoto;Hisao Saito Hisao Saito;Naoki Kobayashi Naoki Kobayashi
以二甲基肼为氮掺杂源，采用金属有机气相外延法对(001) GaAs进行氮原子层掺杂和氮均匀掺杂。氮掺杂 GaAs 层显示出几条与 8 K 时与氮对结合的激子相关的尖锐光致发光线。我们研究了这些尖锐光致发光线的起源，即一对氮原子之间的距离及其配对方向。氮原子层掺杂的 GaAs 的光致发光光谱与均匀氮掺杂的 GaAs 的光致发光光谱不同，正如氮原子分布的不同维度所预期的那样。为了估计一对氮原子之间的距离及其配对方向，我们进行了双原子层掺杂并改变了两个原子层掺杂平面之间的距离。当两个平面彼此相距 1 nm 时，出现仅在均匀掺杂的 GaAs 中观察到的线条。根据该结果，确定与这些线相对应的配对方向不包括在(001)面内，并且配对的氮原子之间的相应距离约为1nm。
Nitrogen atomic-layer-doping and nitrogen uniform doping were performed on (001) GaAs by metalorganic vapor phase epitaxy using dimethylhydrazine as a nitrogen doping source. Nitrogen doped GaAs layers showed several sharp photoluminescence lines relating to excitons bound to nitrogen pairs at 8 K. We investigated the origins of these sharp photoluminescence lines, that is, the distance between the nitrogen atoms of a pair and their pairing direction. The photoluminescence spectra for nitrogen atomic-layer-doped GaAs are different from those for uniformly nitrogen-doped GaAs, as expected from the different dimensions of the nitrogen atom distribution. To estimate the distance between the nitrogen atoms of a pair and their pairing direction, we performed double atomic-layer doping and varied the distance between the two atomic-layer-doped planes. When the two planes are brought to 1 nm of each other, lines observed only in uniformly doped GaAs appear. From this result, it was determined that the pairing directions corresponding to these lines are not included in the (001) plane and the corresponding distance between the nitrogen atoms of a pair is around 1 nm.