An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity
An Intrinsically Stretchable High‐Performance Polymer Semiconductor with Low Crystallinity
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DOI：
10.1002/adfm.201905340
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发表时间：
2019-09
影响因子：
19
通讯作者：
Yu-Qing Zheng;G. Wang;Jiheong Kang;M. Nikolka;Hung‐Chin Wu;Helen Tran;Song Zhang;Hongping Yan;Hu Chen;Pak Yan Yuen;Jaewan Mun;R. Dauskardt;I. McCulloch;J. B. Tok;X. Gu;Z. Bao
中科院分区：
文献类型：
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作者：
Yu-Qing Zheng;G. Wang;Jiheong Kang;M. Nikolka;Hung‐Chin Wu;Helen Tran;Song Zhang;Hongping Yan;Hu Chen;Pak Yan Yuen;Jaewan Mun;R. Dauskardt;I. McCulloch;J. B. Tok;X. Gu;Z. Bao
对于可穿戴和植入式电子应用，开发内在可拉伸的聚合物半导体是有利的，特别是在大面积和高密度器件的制造中。一个主要的挑战是同时实现这些半导体器件的良好的电气和机械性能。虽然通常需要结晶域来实现高迁移率，但无定形域是赋予拉伸性所必需的。在设计表现出低程度的能量无序的高性能供体-受体聚合物方面的最新进展，同时具有高比例的无定形域，对于聚合物半导体来说似乎是有希望的。这里，低结晶，即，比较了近无定形的引达省二噻吩-共-苯并噻二唑（IDTBT）聚合物和半结晶噻吩并[3，2-B]噻吩-二酮基吡咯并吡咯（DPPTT）在应变下的机械性能和电性能。据观察，IDTBT能够实现高模量和高断裂应变，并在高应变下保持电功能。接下来，使用IDTBT聚合物制造完全可拉伸的晶体管，并且在沿沿着拉伸方向的100%应变下观察到迁移率为0.6 cm 2 V-1 s-1。此外，拉伸的IDTBT薄膜的形态演变进行了研究，通过偏振UV-vis和掠入射X射线衍射，以阐明高延展性的分子起源。总之，近无定形IDTBT聚合物标志着关于分子设计原理朝向内在可拉伸的高性能聚合物半导体的有希望的方向。
For wearable and implantable electronics applications, developing intrinsically stretchable polymer semiconductor is advantageous, especially in the manufacturing of large‐area and high‐density devices. A major challenge is to simultaneously achieve good electrical and mechanical properties for these semiconductor devices. While crystalline domains are generally needed to achieve high mobility, amorphous domains are necessary to impart stretchability. Recent progresses in the design of high‐performance donor–acceptor polymers that exhibit low degrees of energetic disorder, while having a high fraction of amorphous domains, appear promising for polymer semiconductors. Here, a low crystalline, i.e., near‐amorphous, indacenodithiophene‐co‐benzothiadiazole (IDTBT) polymer and a semicrystalline thieno[3,2‐b]thiophene‐diketopyrrolopyrrole (DPPTT) are compared, for mechanical properties and electrical performance under strain. It is observed that IDTBT is able to achieve both a high modulus and high fracture strain, and to preserve electrical functionality under high strain. Next, fully stretchable transistors are fabricated using the IDTBT polymer and observed mobility ≈0.6 cm2 V−1 s−1 at 100% strain along stretching direction. In addition, the morphological evolution of the stretched IDTBT films is investigated by polarized UV–vis and grazing‐incidence X‐ray diffraction to elucidate the molecular origins of high ductility. In summary, the near‐amorphous IDTBT polymer signifies a promising direction regarding molecular design principles toward intrinsically stretchable high‐performance polymer semiconductor.