Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory
Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory
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铁电栅极 FET 存储器的外延结构 SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001>
DOI：
10.1080/10584580108010836
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发表时间：
2001
影响因子：
0.7
通讯作者：
S. Sakai
中科院分区：
文献类型：
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作者：
S. Migita;K. Sakamaki;H. Ota;S. Xiong;Y. Tarui;S. Sakai
研究了Si衬底上SrBi 2 Ta 2 O 9/SrTiO 3/Ce0.12Zr0.88O2薄膜的外延生长，并将其应用于铁电栅场效应晶体管（FET）的制作。薄膜的制备通过脉冲激光沉积技术和外延生长，通过X射线衍射确定。该器件表现出优异的电学性能：金属-铁电-绝缘体-半导体（MFIS）二极管的电容-电压特性显示出超过10天的保留，MFIS-FET的Id-Vg特性显示出1天的保留。铁电薄膜的结晶质量对开发高性能集成器件具有重要意义。
Abstract Epitaxial thin film growth of SrBi2Ta2O9/SrTiO3/Ce0.12Zr0.88O2 on Si was studied, and this epitaxial layer structure was applied to fabrication of ferroelectric-gate field effect transistors (FETs). The films were prepared by a pulsed laser deposition technique and epitaxial growth was identified by x-ray diffraction. The devices exhibited excellent electrical performances: Capacitance-voltage characteristic of a metal-ferroelectric-insulator-semiconductor (MFIS) diode showed a retention longer than 10 days and Id-Vg characteristic of an MFIS-FET showed 1 day retention. It is proved that the crystalline quality of ferroelectric thin films is of great importance to develop integrated devices with high performance.
金属有机化学气相沉积法制备InSb薄膜的热电和电性能
DOI：
--
发表时间：
2007
期刊：
Materials Research Society Symposium Proceedings 980
影响因子：
--
作者：
M.Matsumoto;J.Yamazaki;and S.Yamaguchi
通讯作者：
and S.Yamaguchi