Validating optical emission spectroscopy as a diagnostic of microwave activated CH4/Ar/H2 plasmas used for diamond chemical vapor deposition
Validating optical emission spectroscopy as a diagnostic of microwave activated CH4/Ar/H2 plasmas used for diamond chemical vapor deposition
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DOI:
10.1063/1.3078032
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发表时间:
2009-02
影响因子:
3.2
通讯作者:
Jie Ma;M. Ashfold;Y. Mankelevich
中科院分区:
文献类型:
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作者:
Jie Ma;M. Ashfold;Y. Mankelevich
Spatially resolved optical emission spectroscopy (OES) has been used to investigate the gas phase chemistry and composition in a microwave activated CH4/Ar/H2 plasma operating at moderate power densities (∼30 W cm−3) and pressures (≤175 Torr) during chemical vapor deposition of polycrystalline diamond. Several tracer species are monitored in order to gain information about the plasma. Relative concentrations of ground state H (n=1) atoms have been determined by actinometry, and the validity of this method have been demonstrated for the present experimental conditions. Electronically excited H (n=3 and 4) atoms, Ar (4p) atoms, and C2 and CH radicals have been studied also, by monitoring their emissions as functions of process parameters (Ar and CH4 flow rates, input power, and pressure) and of distance above the substrate. These various species exhibit distinctive behaviors, reflecting their different formation mechanisms. Relative trends identified by OES are found to be in very good agreement with those ...