A High-Speed and Low-Power Voltage Controlled Oscillator in 0.18-μm CMOS Process
A High-Speed and Low-Power Voltage Controlled Oscillator in 0.18-μm CMOS Process
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采用 0.18μm CMOS 工艺的高速低功耗压控振荡器
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
S. M. Atarodi
中科院分区：
文献类型：
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作者：
M. Oskooei;A. Afzali;S. M. Atarodi
本文提出了一种具有高振荡频率和低功耗的新型压控振荡器（VCO）。该振荡器为单级电路，由于减少了噪声源，具有较低的相位噪声。为了评估该振荡器的性能参数，我们在0.18 μm标准CMOS工艺中对其进行了仿真。结果表明，压控振荡器的振荡频率在4.66 ~ 5.9 GHz之间。在1 MHz偏置频率下，VCO振荡频率为5.6 GHz时的相位噪声为-99.7 dBc。在相同振荡频率下，功耗为4.8 mW。
In this paper, we propose a new voltage controlled oscillator (VCO) with a high oscillation frequency yet low power consumption. The oscillator which is a single stage circuit has a low phase noise due to reduced noise sources. To evaluate the performance parameters, the oscillator was simulated in a 0.18-μm standard CMOS process. The results show that the oscillation frequency of VCO may vary between 4.66-5.9 GHz. Also, the phase noise of the VCO at oscillation frequency of 5.6 GHz is -99.7 dBc at 1 MHz offset frequency. Also, the power consumption was 4.8 mW at the same oscillation frequency.