RHEA (resist-hardened etch and anodization) process for fine-geometry Josephson junction fabrication
RHEA (resist-hardened etch and anodization) process for fine-geometry Josephson junction fabrication
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用于精细几何约瑟夫森结制造的 RHEA（抗蚀剂硬化蚀刻和阳极氧化）工艺
DOI：
10.1109/20.133875
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发表时间：
1991
影响因子：
2.1
通讯作者：
H. Chan
中科院分区：
文献类型：
--
作者：
Luke P. Lee;E. Arámbula;G. Hanaya;C. Dang;R. Sandell;H. Chan
开发了一种先进的约瑟夫森结制造工艺，用于制造Nb或NbCN集成电路的高质量结。RHEA（抗蚀剂硬化蚀刻和阳极氧化）工艺使用连续的等离子体硬化的光致抗蚀剂，反应离子蚀刻，和阳极氧化工艺序列的图案和制造精细的几何结构结器件低于1 μ m的特征尺寸。这是一种简单、低缺陷的工艺，可最大限度地减少临界尺寸偏差，降低临界尺寸偏差对结几何形状的依赖性，并允许设计灵活性，可以从互连层到结器件进行重叠或内部接触。的过程和实验结果的主要特点。与现有的约瑟夫森结图形化工艺进行了比较，并讨论了该工艺在超大规模集成电路约瑟夫森结工艺中的可扩展性。
An advanced Josephson junction fabrication process has been developed for making high-quality junctions for Nb or NbCN integrated circuits. The RHEA (resist-hardened etch and anodization) process uses a successive plasma hardening of photoresist, reactive-ion-etch, and anodization process sequence to pattern and fabricate fine-geometry junction devices to below 1- mu m feature size. It is a simple, low-defect process that minimizes critical dimension bias, reduces critical dimension bias dependence on junction geometry, and allows the design flexibility of making either overlap or inside contact from interconnect layer to the junction devices. Key features of the process and experimental results are presented. This process is compared with other existing Josephson junction patterning processes, and the extendibility of the process to VLSI Josephson junction technology is discussed.