Effective potentials and the onset of quantization in ultrasmall MOSFETs
Effective potentials and the onset of quantization in ultrasmall MOSFETs
复制标题
超小型 MOSFET 的有效电势和量子化的开始
DOI：
10.1006/spmi.2000.0943
复制
发表时间：
2000
影响因子：
3.1
通讯作者：
D. Ferry
中科院分区：
文献类型：
--
作者：
D. Ferry
讨论了电子波包的最小尺寸与有效电位的引入之间的关系。有效势方法在试图弥补经典力学和量子力学之间的差距方面有着悠久的历史。有效势是通过exp[−βW(x)]由有效势W(x)产生的密度来近似准经典状态的势。有效电位w (x)的产生给出了系统中量化开始的影响。在本文中，我们研究了在半导体的氧化物和耗尽场之间形成的三角阱中有效电位的使用。我们确定了势阱中载流子的量子化能量和它们从界面的平均回退。最后，我们展示了有效势和玻姆衍生量子势之间的联系，这在模拟中已经变得很有趣。
Abstract The connection between the minimum size of an electron wavepacket, and the introduction of an effective potential is discussed. The effective potential approach has a long history of use in trying to transition the gap between classical mechanics and quantum mechanics. An effective potential is one in which the quasi-classical regime is approximated through a density which arises from the effective potential W(x) through exp[ − βW(x)]. The generation of the effective potentialW (x) gives the effects of the onset of quantization in the system. In this paper, we study the use of the effective potential in a triangular well formed between the oxide and the depletion field of the semiconductor. We determine the quantization energy of the carriers in the potential well and their mean set-back from the interface. Finally, we show the connection between the effective potential and the Bohm-derived quantum potentials that have become of interest in simulations.