Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs
Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs
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氮原子层掺杂 GaAs 的清晰光致发光线
DOI：
10.1063/1.115204
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发表时间：
1995
影响因子：
4
通讯作者：
N. Kobayashi
中科院分区：
文献类型：
--
作者：
T. Makimoto;N. Kobayashi
我们使用热钨丝裂解的氮分子（N2）对通过分子束外延生长的GaAs进行氮原子层掺杂。虽然均匀氮掺杂的GaAs层显示出相对弱的氮相关光致发光线，但氮原子层掺杂的GaAs层显示出一系列尖锐且强的光致发光线。在1.4437 eV处观察到占主导地位的光致发光线，其中束缚到氮各向同性陷阱的激子具有最高的结合能。
We performed nitrogen atomic‐layer doping into GaAs grown by molecular beam epitaxy using nitrogen molecules (N2) cracked by a hot tungsten filament. While uniformly nitrogen‐doped GaAs layers show relatively weak nitrogen‐related photoluminescence lines, nitrogen atomic‐layer‐doped GaAs layers show a series of sharp and strong photoluminescence lines. The dominant photoluminescence line was observed at 1.4437 eV, where an exciton bound to the nitrogen isotropic traps has the highest binding energy.