Single Crystal Formamidinium Lead Iodide (FAPbI3): Insight into the Structural, Optical, and Electrical Properties
Single Crystal Formamidinium Lead Iodide (FAPbI3): Insight into the Structural, Optical, and Electrical Properties
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DOI：
10.1002/adma.201505002
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发表时间：
2016-03-16
影响因子：
29.4
通讯作者：
Yang, Yang
中科院分区：
文献类型：
--
作者：
Han, Qifeng;Bae, Sang-Hoon;Yang, Yang
DOI: 10.1002 / adma。201505002这些材料的极限。到目前为止，已经对mapbi3和MAPbBr 3单晶生长的几种方法进行了研究。Huang及其同事报道了使用温度梯度顶种溶液法生长单晶mapbi3的10 mm尺寸，并获得了超过175 μ m的载流子扩散长度Bakr及其同事报告了一种抗溶剂蒸发辅助结晶方法，该方法可以使体积超过100 mm的mapbx3 （X= I或Br）单晶无裂纹此外，Tao等同事和Lin等同事采用冷却溶液法在HI溶液中生长mapbi3单晶。[24,25]后来，Bakr和同事以及Liu等人分别报道了使用逆温度结晶法生长mapbx3钙钛矿单晶的方法。[26,27]单晶fapbi3几乎没有报道。Kanatzidis及其同事报告了50 μ m尺寸的单晶FAPbI 3的基础研究，该单晶明显小于10 mm尺寸的MAPbI 3. bb0Bakr和他的同事们也用类似的方法培养了fapbx3单晶，就像他们培养mapbx3单晶一样。在这里，我们首次展示了5毫米尺寸的fapbi3单晶的生长。采用改进的反温度结晶法生长晶体。我们使用冷却溶液法首先生长fapbi3种子晶体，然后将种子晶体放置在反温度结晶前驱体中以获得更大的晶体。研究了单晶fapbi3的热学、光学和电学性能。此外，我们制作了单晶fapbi3光电探测器，并对其光电导率和光响应进行了研究。低噪声电流和高开关速度得到了证实。
DOI: 10.1002/adma. 201505002 limits of these materials. So far, several approaches of the single crystal growth of MAPbI 3 and MAPbBr 3 have been studied. Huang and co-workers reported a 10 mm sized growth of single crystal MAPbI 3 using a top-seeded solution method with a temperature gradient and obtained a carrier diffusion length over 175 µm.[22] Bakr and co-workers reported an antisolvent vaporassisted crystallization approach that enabled sizable crack-free MAPbX 3 (X= I or Br) single crystals with volumes exceeding 100 mm 3.[23] In addition, Tao and co-workers and Lin and coworkers used a cooling solution method to grow MAPbI 3 single crystals in HI solution.[24, 25] Later Bakr and co-workers and Liu et al. separately reported using an inverse temperature crystallization method to grow MAPbX 3 perovskite single crystals.[26, 27] Single crystal FAPbI 3 has hardly been reported. Kanatzidis and co-workers reported the fundamental study of 50 µm sized single crystal FAPbI 3, which is significantly smaller than the 10 mm size MAPbI 3.[28] Bakr and co-workers also grew FAPbX 3 single crystals using the similar methods as they grew MAPbX 3 single crystals.[29]Here, we demonstrate for the first time the growth of 5 mm sized single crystal FAPbI 3. The crystal was grown using a modified inverse temperature crystallization method. We used a cooling solution method to first grow the FAPbI 3 seed crystal, followed by placing the seed crystals in an inverse temperature crystallization precursor to obtain larger crystals. The thermal, optical, and electrical properties of single crystal FAPbI 3 were explored. In addition, we fabricated single crystal FAPbI 3 photodetectors and investigated photoconductivity and photoresponse. Low noise current and high switching speeds were confirmed.