Growth of 3C-SiC(100) thin films on Si(100) by the molecular ion beam deposition
Growth of 3C-SiC(100) thin films on Si(100) by the molecular ion beam deposition
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DOI：
10.1016/s0039-6028(01)01249-3
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发表时间：
2001-11-01
期刊：
影响因子：
1.9
通讯作者：
Goto, S
中科院分区：
文献类型：
--
作者：
Matsumoto, T;Kiuchi, M;Goto, S
采用分子离子束沉积（IBD）技术，以有机硅离子为前驱体，在750 ~ 1000 ℃的低温下，在Si（100）衬底上制备了碳化硅（SiC）薄膜。质量选择在25 keV提取的离子，并减速到100 eV。由二甲基硅烷（SiH 2（CH 3）（2））生成了分子结构中含有Si C键的甲基硅离子（SiCH 3+）的前体。用PPM-421等离子体过程监测仪测量了SiCH ~（3+）离子的能量分布。确认能量分布为100 I eV。利用拉曼光谱和反射式高能电子衍射（RHEED）分析了SiC薄膜的化学键和表面结构。在拉曼光谱中，位于796 cm（-1）处的峰归属于3C-SiC中的横向光学声子散射。RHEED分析结果表明，在Si（100）衬底上形成了3C-SiC（100）。采用分子IBD技术，以甲基硅离子为前驱体，在低温（750 ℃）下在Si（100）衬底上成功地制备了SiC薄膜。(C)2001 Elsevier Science B. V.保留所有权利。
Silicon carbide (SiC) thin films were produced on Si(1 0 0) at low growth temperatures of 750- 1000 degreesC, using the molecular ion beam deposition (IBD) technique with a precursor of organosilicon ions. The ions extracted at 25 keV were mass selected, and decelerated to 100 eV. The precursor of methylsilicenium ions (SiCH3+), which has a Si C bond in the molecular structure, was generated from dimethylsilane (SiH2(CH3)(2)). The energy distribution of SiCH3+ ions Was measured by a PPM421 plasma process monitor. It was confirmed that the energy distributions were 100 I eV. The chemical bondings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction (RHEED). In the Raman spectrum, a peak at 796 cm(-1) was assigned to transverse optic phonon scattering in 3C-SiC. As a result of the analysis of RHEED patterns, 3C-SiC(1 0 0) were formed on Si(1 0 0) substrates. Using the molecular IBD technique with the precursor of methylsilicenium ions, the formation of SiC thin films is available on Si(1 0 0) at low temperature (750 degreesC). (C) 2001 Elsevier Science B.V. All rights reserved.