Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric
Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric
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DOI：
10.1063/1.1771466
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发表时间：
2004-07
影响因子：
4
通讯作者：
C. Newman;R. Chesterfield;Jeffrey A. Merlo;C. Frisbie
中科院分区：
文献类型：
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作者：
C. Newman;R. Chesterfield;Jeffrey A. Merlo;C. Frisbie
通过在新灰化的SiO_2衬底上粘附并四苯晶体，制备了沟道长度为1和100μm的单晶有机场效应晶体管（SX-OFFET）。用标准四探针结构测量了并四苯单晶从室温到4.2K的本征输运性质，并对潜在的接触效应进行了修正。这些OFFEs的迁移率高达0.1cm2V− 1 s −1，亚阈值摆幅<500 mV，离子闪烁比超过109。较大的器件（L=100μm，W=1000μm）在200 K <T<300 K的温度范围内显示出热激活迁移率，但晶体中的热致裂纹阻止了这种分析扩展到更低的温度。较小的器件具有更大的存活到低温的概率，而没有渗透有源沟道的裂纹，并且代表性器件已经在4.2K<T<300 K的整个范围内进行了研究。运输机…
Single-crystal organic field-effect transistors (SX-OFETs) with channel lengths of 1 and 100μm have been fabricated by adhering thin crystals of tetracene to freshly ashed SiO2 substrates containing countersunk gold contacts. The intrinsic transport properties of the tetracene single crystals, corrected for potential contact effects by using a standard four-probe configuration, have been measured from room temperature down to 4.2K. These OFETs exhibit mobilities as high as 0.1cm2V−1s−1, subthreshold swings of <500mV∕decade, and Ion∕Ioff ratios in excess of 109. The larger devices (L=100μm,W=1000μm) show thermally activated mobilities over the temperature range 200K<T<300K, but thermally induced cracks in the crystal prevent this analysis from being extended to lower temperatures. The smaller devices have a greater probability of surviving to low temperatures without a crack permeating the active channel, and representative devices have been investigated over the full range 4.2K<T<300K. The transport mecha...