Highly Efficient Electron-Selective Layer Free Perovskite Solar Cells by Constructing Effective p-n Heterojunction
Highly Efficient Electron-Selective Layer Free Perovskite Solar Cells by Constructing Effective p-n Heterojunction
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DOI:
10.1002/solr.201600027
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发表时间:
2017-02-01
期刊:
影响因子:
7.9
通讯作者:
Li, Meicheng
中科院分区:
文献类型:
--
作者:
Cui, Peng;Wei, Dong;Li, Meicheng
A heterojunction concept with an n-type self-doped perovskite and a p-type hole-transport material was proposed for fabricating highly efficient electron-selective layer (ESL)-free perovskite solar cells (PSCs). The self-doping property of the perovskite is controlled by defects engineering, which can change from p-to n-type, and the n-type self-doping degree is tuned serially by precursor composition and process conditions. Meanwhile, the compact homogenous and large-grain film morphology is achieved by introducing mixed nonpolar aprotic solvents to obtain optimal balancing between densification and grain size. Hence, the ESL-free PSCs with n-type self-doped compact CH3NH3PbI3 film exhibit state of the art performance with the highest efficiency of 15.69%. Besides, the as-fabricated ESL-free PSCs, which keep their initial efficiencies for a period of 21 days without degradation, demonstrate better long-term stability compared to the conventional planar PSCs.