Enhanced corrosion resistance by engineering crystallography on metals.
Enhanced corrosion resistance by engineering crystallography on metals.
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通过工程晶体学增强金属的耐腐蚀性
DOI：
10.1038/s41467-022-28368-8
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发表时间：
2022-02-07
影响因子：
16.6
通讯作者：
Ma XL
中科院分区：
文献类型：
--
作者：
Wei XX;Zhang B;Wu B;Wang YJ;Tian XH;Yang LX;Oguzie EE;Ma XL
纳米厚的钝化膜赋予金属上级耐腐蚀性，但在长期使用中会降解;它们也容易受到氯化物引起的局部侵蚀。在这里，我们表明，通过工程上的金属基体上的晶体结构相邻的钝化膜，我们得到了很大的增强FeCr 15 Ni 15单晶在硫酸中的耐腐蚀性，与激活时间长达两个数量级比非工程同行。同时，工程晶体学降低了钝化电流密度，使点蚀电位向贵金属方向移动。在过钝化电位下施加阳极极化，我们使过钝化膜下的金属基质高度不均匀，具有{111}端接的结构，这是提高耐腐蚀性的原因。过钝化策略也适用于商业不锈钢，其中晶粒内部和晶界都重建成低能构型。研究结果对防腐蚀工程的预处理工艺具有一定的指导意义。
Nanometer-thick passive films, which impart superior corrosion resistance to metals, are degraded in long-term service; they are also susceptible to chloride-induced localized attack. Here we show, by engineering crystallographic configurations upon metal matrices adjacent to their passive films, we obtain great enhancement of corrosion resistance of FeCr15Ni15 single crystal in sulphuric acid, with activation time up to two orders of magnitude longer than that of the non-engineered counterparts. Meanwhile, engineering crystallography decreases the passive current density and shifts the pitting potential to noble values. Applying anodic polarizations under a transpassivation potential, we make the metal matrices underneath the transpassive films highly uneven with {111}-terminated configurations, which is responsible for the enhancement of corrosion resistance. The transpassivation strategy also works in the commercial stainless steels where both grain interior and grain boundaries are rebuilt into the low-energy configurations. Our results demonstrate a technological implication in the pretreatment process of anti-corrosion engineering.
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影响因子：
8.3
作者：
Beverskog, B;Bojinov, M;Sirkiä, P
通讯作者：
Sirkiä, P
影响因子：
4.5
作者：
Bojinov, M;Fabricius, G;Sundholm, G
通讯作者：
Sundholm, G
影响因子：
8.3
作者：
ITAGAKI, M;MATSUZAKI, A;WATANABE, K
通讯作者：
WATANABE, K
影响因子：
1.9
作者：
Gray, J. J.;El Dasher, B. S.;Orme, C. A.
通讯作者：
Orme, C. A.
影响因子：
6.6
作者：
Bojinov, M;Fabricius, G;Sundholm, G
通讯作者：
Sundholm, G