Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
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X 射线形貌表征二苯甲酮单晶中的生长位错
DOI：
10.1143/jjap.31.2202
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发表时间：
1992
影响因子：
1.5
通讯作者：
Kenichi Kojima Kenichi Kojima
中科院分区：
文献类型：
--
作者：
M. Tachibana;S. Motomura;A. Uedono;Qi;Kenichi Kojima Kenichi Kojima
二苯甲酮单晶是通过直拉法生长的。使用 X 射线形貌检查晶体生长过程中引入的位错。在一些反射平面上拍摄的形貌图中发现了单位错的双重图像。主要生长位错的伯格斯矢量是根据运动学理论对位错图像进行分析来估计的。
Benzophenone single crystals were grown by the Czochralski method. The dislocations introduced during the crystal growth were examined using X-ray topography. Double images of single dislocations were found on the topographs taken in some reflection planes. The Burgers vector of predominant grown-in dislocations was estimated from analysis of the dislocation images on the basis of kinematical theory.