Investigation of flicker noise and deep-levels in GaN/AlGaN transistors
Investigation of flicker noise and deep-levels in GaN/AlGaN transistors
复制标题
GaN/AlGaN 晶体管中闪烁噪声和深能级的研究
DOI：
10.1007/s11664-000-0066-8
复制
发表时间：
2000
影响因子：
2.1
通讯作者：
M. Wojtowicz
中科院分区：
文献类型：
--
作者：
A. Balandin;K. Wang;S. Cai;R. Li;C. Viswanathan;E. N. Wang;M. Wojtowicz
我们报告闪烁噪声测量结合深能级瞬态光谱的掺杂和未掺杂沟道GaN/AlGaN异质结场效应晶体管。掺杂器件的低温噪声谱显示出明显的产生-复合峰。从这些噪声峰中提取的活化能的值与使用深能级光谱测量的活化能一致。我们的研究结果表明，未掺杂的沟道器件的输入参考噪声谱密度是小得多（高达两个数量级）比具有可比的电特性的掺杂沟道器件。由于掺杂引起的额外缺陷加起来产生复合和闪烁噪声。
We report flicker noise measurements combined with deep-level transient spectroscopy of the doped and undoped channel GaN/AlGaN heterostructure field-effect transistors. The low-temperature noise spectra for the doped devices show clear generation-recombination peaks. The value of the activation energy extracted from these noise peaks is consistent with the activation energies measured using deep-level spectroscopy. Our results indicate that the input-referred noise spectral density of the undoped channel devices is much smaller (up to two orders of magnitude) than that of the doped channel devices with comparable electric characteristics. The additional defects due to doping add up to the generation-recombination and flicker noise.