Reactor design considerations in the hot filament/direct current plasma synthesis of carbon nanofibers
Reactor design considerations in the hot filament/direct current plasma synthesis of carbon nanofibers
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DOI：
10.1063/1.1601293
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发表时间：
2003-09-15
影响因子：
3.2
通讯作者：
Meyyappan, M
中科院分区：
文献类型：
--
作者：
Cruden, BA;Cassell, AM;Meyyappan, M
采用高温灯丝/直流等离子体相结合的方法，以乙炔/氨水为原料，对碳纳米纤维的化学气相沉积进行了研究。作为研究的一部分，灯丝的使用和基板保持器设计的影响已被检查的沉积产品的扫描电子显微镜成像和监测的下游产品的残留气体分析（RGA）。结果表明，灯丝主要是在衬底的预处理，提高CNF生长质量的重要。然而，当与直流等离子体结合时，细丝具有更小的影响，增加了生长速率但降低了生长质量。通过将石墨间隔物引入电极中来修改衬底保持器。通过改变间隔物的尺寸，阴极的有效表面积被修改，允许在保持电压恒定的同时控制输入到反应器的功率。这允许对通常在等离子体处理中不可分割的物理化学过程进行一些独立控制，包括气相化学、通过离子轰击的衬底加热和蚀刻以及由于电场引起的生长对准效应。这项工作展示了如何分离这些过程可以更好地控制所需的生长产物。(C)2003年，美国物理学会。
A combined hot filament/direct current (dc) plasma approach to chemical vapor deposition of carbon nanofibers (CNFs) using an acetylene/ammonia feedstock has been explored. As a part of the study, the impact of filament usage and substrate holder design has been examined by scanning electron microscopy imaging of deposition products and monitoring of downstream products by residual gas analysis (RGA). It is demonstrated that the filament wire is important primarily in the pretreatment of the substrate, improving CNF growth quality. However, the filament has a more minor impact when combined with the dc plasma, increasing growth rate but reducing growth quality. The substrate holder is modified by introducing a graphite spacer into the electrode. By varying the size of the spacer, the effective surface area of the cathode is modified, allowing control over the power input to the reactor while holding the voltage constant. This allows for some independent control of physicochemical processes that are typically inseparable in plasma processing, including gas phase chemistry, substrate heating and etching by ion bombardment, and growth alignment effects due to the electric field. This work demonstrates how separating these processes allows for better control over the desired growth product. (C) 2003 American Institute of Physics.