The growth of Cr4+:YAG and Cr4+:GGG thin films by pulsed laser deposition
The growth of Cr4+:YAG and Cr4+:GGG thin films by pulsed laser deposition
复制标题
脉冲激光沉积 Cr4:YAG 和 Cr4:GGG 薄膜的生长
DOI：
10.1016/s0030-4018(00)01123-8
复制
发表时间：
2001
影响因子：
2.4
通讯作者：
H. Kumagai
中科院分区：
文献类型：
--
作者：
S. Fukaya;K. Adachi;M. Obara;H. Kumagai
采用脉冲激光沉积(PLD)方法在YAG衬底上制备了Cr，Ca：Y3Al5O12(YAG)外延薄膜。用X射线光电子能谱测量了Cr，Ca：YAG薄膜中铬离子的化学位移随PLD室中氧分压的变化。通过测量掺铬的YAG薄膜中Cr4+离子的荧光强度，发现在氧背景压力下，作为电荷补偿剂的Ca2+离子的加入增加了薄膜中Cr4+离子的活性分数。氧分压为2mTorr时，薄膜中的Cr4+数密度最大。Cr，Ca：GGG外延薄膜也显示出Cr4+荧光对沉积过程中氧分压的依赖关系。
The Cr,Ca:Y3Al5O12(YAG) epitaxial thin films on YAG substrate have been fabricated by pulsed laser deposition (PLD) method. The chemical shifts of chromium ions in the Cr,Ca:YAG thin films is measured by X-ray photoelectron spectroscopy as a function of oxygen partial pressure in the PLD chamber. By measuring the fluorescence intensity of Cr4+ions in Cr doped YAG thin films, it is found that the addition of Ca2+ions as a charge compensator under oxygen background pressure increases the active Cr4+ion fraction in the YAG thin film. The oxygen partial pressure of 2 mTorr is found optimum to maximize the Cr4+number density in the Cr,Ca:YAG thin film. The Cr,Ca:GGG epitaxial thin film also shows the dependence of Cr4+fluorescence on the oxygen partial pressure during deposition.