Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration
Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration
复制标题
异质隧道结双层隧道场效应晶体管的源工程：厚度和杂质浓度
DOI：
10.35848/1882-0786/ab9875
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发表时间：
2020
影响因子：
2.3
通讯作者：
S. Takagi
中科院分区：
文献类型：
--
作者：
Kimihiko Kato;T. Mori;Y. Morita;T. Matsukawa;M. Takenaka;S. Takagi
我们研究了具有薄膜异质隧穿结的双层隧穿场效应晶体管中源极层厚度、源极杂质浓度和沟道厚度对电学特性的影响。器件模拟表明，由于隧穿结上带间隧穿不均匀，源极层变薄会显著降低导通电流（Ion），而沟道层变薄对增加Ion是有效的。另一方面，发现源极/沟道杂质浓度约为3×10¹⁸ cm⁻³时，对于高Ion、高Ion/Ioff以及抑制转移特性随Vd变化而偏移是最优的。
We have investigated the impacts of source layer thickness, source impurity concentration and channel thickness in a bilayer tunneling field-effect transistor with a thin-film hetero tunneling junction on electrical characteristics. Device simulation has revealed that thinning of the source layer significantly degrades on-state current (Ion) due to non-uniform band-to-band tunneling over the tunneling junction, while channel layer thinning is effective for increasing Ion. On the other hand, source/channel impurity concentrations of around 3 × 1018 cm‒3 are found to be optimal for high Ion, high Ion/Ioff and suppression of transfer characteristic shifts with changing Vd.